 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APT13GP120K 1200V POWER MOS 7 IGBT (R) A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7(R) IGBT provides a lower cost alternative to a Power MOSFET. TO-220 * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient * 100 kHz operation @ 600V, 10A * 50 kHz operation @ 600V, 16A * RBSOA Rated G C C E G E All Ratings: TC = 25C unless otherwise specified. APT13GP120K UNIT 1200 20 30 41 20 50 50A @ 960V 250 -55 to 150 300 Watts C Amps Volts Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 @ TC = 150C Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT 1200 3 4.5 3.3 3.0 250 2 2 6 3.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) I CES I GES A nA 2-2004 050-7415 Rev B Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) 2500 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT13GP120K Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 13A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 13A 4 MIN TYP MAX UNIT pF V nC A 1145 90 15 7.5 55 8 26 50 9 12 28 34 114 330 165 9 12 70 200 223 710 840 J ns ns Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 4 5 R G = 5 TJ = +25C Turn-on Switching Energy (Diode) 5 6 J Inductive Switching (125C) VCC = 600V VGE = 15V I C = 13A R G = 5 TJ = +125C Turn-on Switching Energy (Diode) 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm .50 N/A 1.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7415 Rev B 2-2004 TYPICAL PERFORMANCE CURVES 40 35 IC, COLLECTOR CURRENT (A) VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 40 35 IC, COLLECTOR CURRENT (A) APT13GP120K VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE 30 25 20 15 10 5 0 TC = 125C TC = 25C TC = -55C 30 25 20 15 10 5 0 TC = -55C TC = 125C TC = 25C 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST <0.5 % DUTY CYCLE 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC = 13A TJ = 25C FIGURE 1, Output Characteristics(VGE = 15V) 40 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 GATE CHARGE (nC) FIGURE 4, Gate Charge 60 35 IC, COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 0 2 3 4 5 6 7 8 9 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 1 TJ = -55C TJ = 25C TJ = 125C VCE = 240V VCE = 600V VCE = 960V VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 6 5 IC = 26A 4 IC = 13A 3 2 1 0 IC= 6.5A 5 IC = 26A IC = 13A 3 IC= 6.5A 2 4 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 6 -25 0 25 50 75 100 125 TJ, JUNCTION TRMPERATURE (C) FIGURE 6, On State Voltage vs Junction Temperature 60 0 -55 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) IC, DC COLLECTOR CURRENT(A) 50 40 30 20 10 0 -50 2-2004 050-7415 Rev B 1.05 1.00 0.95 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0.90 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 14 td(ON), TURN-ON DELAY TIME (ns) 120 td (OFF), TURN-OFF DELAY TIME (ns) APT13GP120K 12 10 8 6 4 2 0 5 VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H 100 80 VGE =15V,TJ=125C VGE = 15V 60 40 20 0 VCE = 600V RG = 5 L = 100 H VGE =15V,TJ=25C 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30 25 tr, RISE TIME (ns) tf, FALL TIME (ns) RG = 5, L = 100H, VCE = 600V 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 300 RG = 5, L = 100H, VCE = 600V 250 200 150 100 TJ = 25C, VGE = 10V or 15V TJ = 125C, VGE = 10V or 15V 20 15 10 TJ = 25 or 125C,VGE = 15V 5 0 50 0 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1400 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J) VCE = 600V VGE = +15V RG = 5 5 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1600 1400 1200 1000 800 600 400 200 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 1600 SWITCHING ENERGY LOSSES (J) VCE = 600V VGE = +15V RG = 5 VCE = 600V VGE = +15V RG = 5 1200 1000 800 600 400 200 0 TJ = 125C,VGE =15V TJ = 125C, VGE = 10V or 15V TJ = 25C, VGE = 10V or 15V TJ = 25C,VGE =15V 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 1800 SWITCHING ENERGY LOSSES (J) 0 1600 1400 1200 1000 800 600 400 200 0 0 Eoff, 26A Eon2, 26A VCE = 600V VGE = +15V TJ = 125C 1400 1200 1000 800 600 400 200 Eon2,26A Eoff, 13A Eoff,26A Eon2,13A Eon2,6.5A Eoff, 6.5A Eoff, 13A Eon2, 13A Eoff, 6.5A Eon2, 6.5A 050-7415 Rev B 2-2004 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 25 TYPICAL PERFORMANCE CURVES 3,000 1,000 C, CAPACITANCE ( F) APT13GP120K 60 Cies 50 IC, COLLECTOR CURRENT (A) 500 P 40 30 20 10 0 100 Coes 10 Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.3 1 0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area ZJC, THERMAL IMPEDANCE (C/W) Note: PDM t1 t2 0.20 0.10 0 0.1 0.05 10-5 10-4 SINGLE PULSE Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 181 FMAX, OPERATING FREQUENCY (kHz) RC MODEL Junction temp. ( "C) 0.216 Power (Watts) 0.284 Case temperature 0.161F 0.600F 100 50 Fmax = min(f max1 , f max 2 ) f max1 = TJ = 125C TC = 75C D = 50 % VCE = 600V RG = 5 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off f max 2 = Pdiss = FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 10 5 TJ - TC R JC 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 050-7415 Rev B 2-2004 APT13GP120K APT15DF120 10% Gate Voltage TJ = 125C td(on) V CC IC V CE tr 90% Drain Current A D.U.T. 5% 10% DrainVoltage Switching Energy 5% Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage td(off) DrainVoltage 90% TJ = 125C A V CE 100uH IC V CLAMP B tf 10% 0 Drain Current A DRIVER* D.U.T. Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit TO-220AC Package Outline 1.39 (.055) 0.51 (.020) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230) Collector 16.51 (.650) 14.23 (.560) 3.42 (.135) 2.54 (.100) 4.08 (.161) Dia. 3.54 (.139) 6.35 (.250) MAX. 14.73 (.580) 12.70 (.500) 0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 2-2004 Gate Collector Emitter 1.77 (.070) 3-Plcs. 1.15 (.045) 1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) 4.82 (.190) 3.56 (.140) 050-7415 Rev B Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
Price & Availability of APT13GP120K
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |